- Samsung quietly prepares DRAM-free PCIe 4.0 SSD with flagship-level read performance
- Host Memory Buffer replaces dedicated DRAM inside Samsung’s upcoming budget SSD
- Leaked specifications reveal 7,150 MB/s speeds from Samsung’s mystery SSD
Samsung appears to be preparing a budget PCIe 4.0 NVMe SSD which removes the onboard DRAM cache found in traditional drive designs.
The unannounced model surfaced briefly on Samsung’s website recently, before the listing was taken down without any official confirmation from the company.
Listed specifications describe a 1TB drive with sequential read speeds reaching 7,150 MB/s and write speeds reaching 6,450 MB/s.
How Samsung plans to compensate for missing DRAM
Traditional SSDs rely on dedicated DRAM to store the flash translation layer, letting the controller locate data across NAND flash quickly and efficiently.
However, as the global “RAMpocalypse” continues to worsen, even the largest vendors are looking for ways to reduce their dependence on DRAM.
Without that DRAM, drives can suffer higher latency and weaker performance during sustained workloads or heavy multitasking sessions.
To offset this gap, Samsung is using NVMe’s Host Memory Buffer (HMB) feature, which reserves a small portion of system memory over PCI Express instead.
That borrowed memory holds mapping metadata rather than user files, connecting logical addresses to their physical NAND locations directly.
HMB generally cannot match the responsiveness of dedicated DRAM, though it improves performance compared to drives with no caching mechanism at all.
The drive carries a 400 TBW endurance rating, a modest figure for a 1TB SSD by current industry standards.
That number hints at Quad-Level Cell (QLC) NAND flash, which stores four bits per memory cell and lowers both cost and durability.
Samsung has not disclosed publicly which specific NAND flash technology sits inside this particular unannounced drive model.
Rising component costs are reshaping SSD design choices
Samsung’s move comes as NAND flash and DRAM pricing continue climbing sharply across the broader global storage industry this year.
Removing the DRAM package cuts component costs directly, simplifies PCB design, and helps maintain competitive pricing within the mainstream SSD segment overall.
QLC NAND increases storage density and lowers manufacturing costs, though it trails Triple-Level Cell NAND in sustained write performance and long-term endurance ratings.
It also remains considerably less durable than older Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND technologies still found in some enterprise storage products.
Despite those trade-offs, the listed sequential speeds of 7,150 MB/s and 6,450 MB/s place the drive alongside many mainstream PCIe 4.0 SSDs with dedicated DRAM caches.
Samsung has not announced pricing, availability, the official product name, or the specific NAND technology used in the drive.
Until those details emerge, the leaked specifications point toward a lower-cost PCIe 4.0 SSD designed to balance competitive performance with reduced manufacturing costs as memory prices continue rising.
Via The Guru of 3D
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